Parameters | |
---|---|
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 75A |
Lead Free | Contains Lead |
Time@Peak Reflow Temperature-Max (s) | 30 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 300W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 300W |
Case Connection | DRAIN |
Turn On Delay Time | 13 ns |
FET Type | N-Channel |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Transistor Application | SWITCHING |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 2m Ω @ 75A, 10V |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Transistor Element Material | SILICON |
Input Capacitance (Ciss) (Max) @ Vds | 6450pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 75A Tc |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) (Max) @ Vgs | 240nC @ 10V |
Published | 2003 |
Rise Time | 120ns |
Series | HEXFET® |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
JESD-609 Code | e3 |
Part Status | Active |
Vgs (Max) | ±20V |
Fall Time (Typ) | 130 ns |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Turn-Off Delay Time | 130 ns |
Number of Terminations | 2 |
Continuous Drain Current (ID) | 75A |
ECCN Code | EAR99 |
Threshold Voltage | 4V |
Resistance | 2MOhm |
Gate to Source Voltage (Vgs) | 20V |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Drain Current-Max (Abs) (ID) | 270A |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE |
Drain to Source Breakdown Voltage | 40V |
Subcategory | FET General Purpose Power |
Avalanche Energy Rating (Eas) | 540 mJ |
Recovery Time | 84 ns |
Max Junction Temperature (Tj) | 175°C |
Voltage - Rated DC | 40V |
Height | 4.83mm |
Technology | MOSFET (Metal Oxide) |
Length | 10.668mm |
Width | 9.65mm |
Terminal Form | GULL WING |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |