Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2002 |
Series | HEXFET® |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 75V |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 82A |
Time@Peak Reflow Temperature-Max (s) | 30 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Power Dissipation-Max | 230W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 170W |
Case Connection | DRAIN |
Turn On Delay Time | 13 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 13m Ω @ 43A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 3820pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 82A Tc |
Gate Charge (Qg) (Max) @ Vgs | 160nC @ 10V |
Rise Time | 64ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 48 ns |
Turn-Off Delay Time | 49 ns |
Continuous Drain Current (ID) | 82A |
Threshold Voltage | 4V |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 75A |
Drain to Source Breakdown Voltage | 75V |
Pulsed Drain Current-Max (IDM) | 280A |
Dual Supply Voltage | 75V |
Recovery Time | 150 ns |
Nominal Vgs | 4 V |
Height | 4.826mm |
Length | 10.668mm |
Width | 9.65mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Contains Lead, Lead Free |