Parameters |
Factory Lead Time |
1 Week |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-262-3 Long Leads, I2Pak, TO-262AA |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Published |
2002 |
Series |
HEXFET® |
JESD-609 Code |
e3 |
Part Status |
Not For New Designs |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) - with Nickel (Ni) barrier |
Additional Feature |
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE |
Subcategory |
FET General Purpose Power |
Voltage - Rated DC |
55V |
Technology |
MOSFET (Metal Oxide) |
Terminal Position |
SINGLE |
Peak Reflow Temperature (Cel) |
260 |
Current Rating |
110A |
Time@Peak Reflow Temperature-Max (s) |
30 |
Number of Elements |
1 |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max |
200W Tc |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
200W |
Case Connection |
DRAIN |
Turn On Delay Time |
14 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
8m Ω @ 62A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
3247pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
110A Tc |
Gate Charge (Qg) (Max) @ Vgs |
146nC @ 10V |
Rise Time |
101ns |
Drive Voltage (Max Rds On,Min Rds On) |
10V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
65 ns |
Turn-Off Delay Time |
50 ns |
Continuous Drain Current (ID) |
110A |
Threshold Voltage |
4V |
Gate to Source Voltage (Vgs) |
20V |
Drain Current-Max (Abs) (ID) |
75A |
Drain-source On Resistance-Max |
0.008Ohm |
Drain to Source Breakdown Voltage |
55V |
Avalanche Energy Rating (Eas) |
264 mJ |
Height |
9.65mm |
Length |
10.668mm |
Width |
4.826mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |