Parameters | |
---|---|
JESD-609 Code | e3 |
Drain Current-Max (Abs) (ID) | 75A |
Drain to Source Breakdown Voltage | 55V |
Part Status | Active |
Dual Supply Voltage | 55V |
Avalanche Energy Rating (Eas) | 264 mJ |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Recovery Time | 104 ns |
Max Junction Temperature (Tj) | 175°C |
Nominal Vgs | 4 V |
Number of Terminations | 2 |
Height | 5.084mm |
Length | 10.668mm |
Width | 10.54mm |
Termination | SMD/SMT |
Radiation Hardening | No |
REACH SVHC | No SVHC |
ECCN Code | EAR99 |
RoHS Status | ROHS3 Compliant |
Lead Free | Contains Lead, Lead Free |
Resistance | 8MOhm |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 55V |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 110A |
Time@Peak Reflow Temperature-Max (s) | 30 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 200W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 200W |
Case Connection | DRAIN |
Turn On Delay Time | 14 ns |
Factory Lead Time | 1 Week |
FET Type | N-Channel |
Mount | Surface Mount |
Transistor Application | SWITCHING |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 8m Ω @ 62A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Input Capacitance (Ciss) (Max) @ Vds | 3247pF @ 25V |
Number of Pins | 3 |
Current - Continuous Drain (Id) @ 25°C | 110A Tc |
Gate Charge (Qg) (Max) @ Vgs | 146nC @ 10V |
Transistor Element Material | SILICON |
Rise Time | 101ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Operating Temperature | -55°C~175°C TJ |
Fall Time (Typ) | 65 ns |
Turn-Off Delay Time | 50 ns |
Packaging | Tape & Reel (TR) |
Continuous Drain Current (ID) | 110A |
Published | 2001 |
Threshold Voltage | 4V |
Series | HEXFET® |
JEDEC-95 Code | TO-252 |
Gate to Source Voltage (Vgs) | 20V |