Parameters | |
---|---|
Input Capacitance | 2.13nF |
Recovery Time | 24 ns |
Drain to Source Resistance | 6.3mOhm |
Rds On Max | 6.3 mΩ |
Nominal Vgs | 2.25 V |
Height | 4.826mm |
Length | 10.668mm |
Width | 9.65mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Supplier Device Package | D2PAK |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2004 |
Series | HEXFET® |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Resistance | 6.3MOhm |
Max Operating Temperature | 175°C |
Min Operating Temperature | -55°C |
Voltage - Rated DC | 30V |
Technology | MOSFET (Metal Oxide) |
Current Rating | 87A |
Number of Elements | 1 |
Power Dissipation-Max | 79W Tc |
Element Configuration | Single |
Power Dissipation | 79mW |
Turn On Delay Time | 13 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 6.3mOhm @ 21A, 10V |
Vgs(th) (Max) @ Id | 2.25V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 2130pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 87A Tc |
Gate Charge (Qg) (Max) @ Vgs | 26nC @ 4.5V |
Rise Time | 41ns |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 4.7 ns |
Turn-Off Delay Time | 16 ns |
Continuous Drain Current (ID) | 87A |
Threshold Voltage | 2.25V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 30V |