Parameters | |
---|---|
Power Dissipation | 200W |
Case Connection | DRAIN |
Turn On Delay Time | 17 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 60m Ω @ 24A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 2700pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 40A Tc |
Gate Charge (Qg) (Max) @ Vgs | 180nC @ 10V |
Rise Time | 86ns |
Drain to Source Voltage (Vdss) | 100V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 81 ns |
Turn-Off Delay Time | 79 ns |
Continuous Drain Current (ID) | -40A |
Threshold Voltage | -4V |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | -100V |
Dual Supply Voltage | -100V |
Avalanche Energy Rating (Eas) | 780 mJ |
Recovery Time | 260 ns |
Max Junction Temperature (Tj) | 175°C |
Nominal Vgs | -4 V |
Height | 19.8mm |
Length | 10.5156mm |
Width | 4.69mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 1998 |
Series | HEXFET® |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Termination | Through Hole |
ECCN Code | EAR99 |
Resistance | 60mOhm |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE |
Subcategory | Other Transistors |
Voltage - Rated DC | -100V |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | 250 |
Current Rating | -40A |
Time@Peak Reflow Temperature-Max (s) | 30 |
Lead Pitch | 2.54mm |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 200W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |