Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Supplier Device Package | TO-220AB |
Weight | 6.000006g |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2008 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Resistance | 77mOhm |
Max Operating Temperature | 175°C |
Min Operating Temperature | -55°C |
Voltage - Rated DC | 100V |
Technology | MOSFET (Metal Oxide) |
Current Rating | 28A |
Number of Elements | 1 |
Number of Channels | 1 |
Voltage | 100V |
Power Dissipation-Max | 150W Tc |
Element Configuration | Single |
Current | 28A |
Power Dissipation | 150W |
Turn On Delay Time | 11 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 77mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1700pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 28A Tc |
Gate Charge (Qg) (Max) @ Vgs | 72nC @ 10V |
Rise Time | 44ns |
Drain to Source Voltage (Vdss) | 100V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 43 ns |
Turn-Off Delay Time | 53 ns |
Continuous Drain Current (ID) | 28A |
Threshold Voltage | 4V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 100V |
Input Capacitance | 1.7nF |
Recovery Time | 360 ns |
Max Junction Temperature (Tj) | 175°C |
Drain to Source Resistance | 77mOhm |
Rds On Max | 77 mΩ |
Nominal Vgs | 4 V |
Height | 19.89mm |
Length | 10.51mm |
Width | 4.7mm |
Radiation Hardening | No |
REACH SVHC | Unknown |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |