Parameters | |
---|---|
Power Dissipation-Max | 3.1W Ta 50W Tc |
Element Configuration | Single |
Power Dissipation | 3.1W |
Turn On Delay Time | 7 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 1.1Ohm @ 2.6A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 260pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 4.4A Tc |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
Rise Time | 13ns |
Drain to Source Voltage (Vdss) | 250V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 12 ns |
Turn-Off Delay Time | 20 ns |
Continuous Drain Current (ID) | 4.4A |
Threshold Voltage | 2V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 250V |
Input Capacitance | 260pF |
Drain to Source Resistance | 1.1Ohm |
Rds On Max | 1.1 Ω |
Factory Lead Time | 1 Week |
Height | 4.83mm |
Length | 10.41mm |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Width | 9.65mm |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Radiation Hardening | No |
Number of Pins | 3 |
REACH SVHC | Unknown |
RoHS Status | ROHS3 Compliant |
Supplier Device Package | D2PAK |
Lead Free | Lead Free |
Weight | 1.437803g |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2011 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Resistance | 1.1Ohm |
Max Operating Temperature | 150°C |
Min Operating Temperature | -55°C |
Technology | MOSFET (Metal Oxide) |
Number of Elements | 1 |
Number of Channels | 1 |