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IRF6611TRPBF

MOSFET N-CH 30V 32A DIRECTFET


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRF6611TRPBF
  • Package: DirectFET™ Isometric MX
  • Datasheet: PDF
  • Stock: 443
  • Description: MOSFET N-CH 30V 32A DIRECTFET (Kg)

Details

Tags

Parameters
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating 32A
Time@Peak Reflow Temperature-Max (s) 40
JESD-30 Code R-XBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.9W Ta 89W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 89W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.6m Ω @ 27A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4860pF @ 15V
Current - Continuous Drain (Id) @ 25°C 32A Ta 150A Tc
Gate Charge (Qg) (Max) @ Vgs 56nC @ 4.5V
Rise Time 57ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6.5 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 22A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0026Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 220A
Avalanche Energy Rating (Eas) 310 mJ
Height 506μm
Length 6.35mm
Width 5.05mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MX
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series HEXFET®
See Relate Datesheet

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