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IRF6631TRPBF

MOSFET N-CH 30V 13A DIRECTFET


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRF6631TRPBF
  • Package: DirectFET™ Isometric SQ
  • Datasheet: PDF
  • Stock: 784
  • Description: MOSFET N-CH 30V 13A DIRECTFET (Kg)

Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric SQ
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Current Rating 13A
JESD-30 Code R-XBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.2W Ta 42W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 42W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.8m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1450pF @ 15V
Current - Continuous Drain (Id) @ 25°C 13A Ta 57A Tc
Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V
Rise Time 18ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.9 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 10A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0078Ohm
Drain to Source Breakdown Voltage 30V
Nominal Vgs 1.8 V
Height 506μm
Length 4.826mm
Width 3.95mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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