Parameters | |
---|---|
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | DirectFET™ Isometric MN |
Number of Pins | 5 |
Supplier Device Package | DIRECTFET™ MN |
Operating Temperature | -40°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2005 |
Series | HEXFET® |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Termination | SMD/SMT |
Resistance | 9.5MOhm |
Max Operating Temperature | 150°C |
Min Operating Temperature | -40°C |
Voltage - Rated DC | 80V |
Technology | MOSFET (Metal Oxide) |
Current Rating | 12A |
Number of Elements | 1 |
Power Dissipation-Max | 2.8W Ta 89W Tc |
Element Configuration | Single |
Power Dissipation | 89W |
Turn On Delay Time | 17 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 9.5mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id | 4.9V @ 150μA |
Input Capacitance (Ciss) (Max) @ Vds | 2060pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 12A Ta 68A Tc |
Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
Rise Time | 20ns |
Drain to Source Voltage (Vdss) | 80V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 12 ns |
Turn-Off Delay Time | 31 ns |
Continuous Drain Current (ID) | 9.6A |
Threshold Voltage | 3V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 80V |
Dual Supply Voltage | 80V |
Input Capacitance | 2.06nF |
Recovery Time | 54 ns |
Drain to Source Resistance | 7.6mOhm |
Rds On Max | 9.5 mΩ |
Nominal Vgs | 3 V |
Height | 506μm |
Length | 6.35mm |
Width | 5.05mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |