IRF6665TRPBF
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | DirectFET™ Isometric SH |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| Series | HEXFET® |
| JESD-609 Code | e1 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 100V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Current Rating | 4.2A |
| JESD-30 Code | R-XBCC-N2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.2W Ta 42W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 42W |
| Case Connection | DRAIN |
| Turn On Delay Time | 7.4 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 62m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 530pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 4.2A Ta 19A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
| Rise Time | 2.8ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 4.3 ns |
| Turn-Off Delay Time | 14 ns |
| Continuous Drain Current (ID) | 3.4A |
| Threshold Voltage | 5V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.062Ohm |
| Drain to Source Breakdown Voltage | 100V |
| Nominal Vgs | 5 V |
| Height | 506μm |
| Length | 4.826mm |
| Width | 3.95mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
