Parameters | |
---|---|
Vgs(th) (Max) @ Id | 4.9V @ 100μA |
Input Capacitance (Ciss) (Max) @ Vds | 1320pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 55A Tc |
Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
Rise Time | 13ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 23 ns |
Turn-Off Delay Time | 7.1 ns |
Continuous Drain Current (ID) | 55mA |
Threshold Voltage | 4V |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.015Ohm |
Drain to Source Breakdown Voltage | 80V |
Pulsed Drain Current-Max (IDM) | 170A |
Avalanche Energy Rating (Eas) | 24 mJ |
Height | 533.4μm |
Length | 6.35mm |
Width | 5.0546mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | DirectFET™ Isometric MZ |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2006 |
Series | HEXFET® |
JESD-609 Code | e1 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 80V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | BOTTOM |
Current Rating | 55A |
Number of Elements | 1 |
Power Dissipation-Max | 2.8W Ta 89W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 89W |
Case Connection | DRAIN |
Turn On Delay Time | 19 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 15m Ω @ 12A, 10V |