Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | DirectFET™ Isometric MX |
Number of Pins | 7 |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2010 |
Series | HEXFET® |
JESD-609 Code | e1 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | BOTTOM |
JESD-30 Code | R-XBCC-N3 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 2.8W Ta 75W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 75W |
Case Connection | DRAIN |
Turn On Delay Time | 16 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 1.8m Ω @ 32A, 10V |
Vgs(th) (Max) @ Id | 2.35V @ 100μA |
Input Capacitance (Ciss) (Max) @ Vds | 4280pF @ 13V |
Current - Continuous Drain (Id) @ 25°C | 32A Ta 160A Tc |
Gate Charge (Qg) (Max) @ Vgs | 53nC @ 4.5V |
Rise Time | 27ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 11 ns |
Turn-Off Delay Time | 16 ns |
Continuous Drain Current (ID) | 32A |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 25V |
Pulsed Drain Current-Max (IDM) | 250A |
Height | 506μm |
Length | 6.35mm |
Width | 5.05mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |