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IRF6797MTRPBF

MOSFET N-CH 25V 36A DIRECTFET-MX


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRF6797MTRPBF
  • Package: DirectFET™ Isometric MX
  • Datasheet: PDF
  • Stock: 325
  • Description: MOSFET N-CH 25V 36A DIRECTFET-MX (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric MX
Number of Pins 7
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series HEXFET®
JESD-609 Code e1
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW CONDUCTION LOSS
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
JESD-30 Code R-XBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.8W Ta 89W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 89W
Case Connection DRAIN
Turn On Delay Time 22 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.4m Ω @ 38A, 10V
Vgs(th) (Max) @ Id 2.35V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 5790pF @ 13V
Current - Continuous Drain (Id) @ 25°C 36A Ta 210A Tc
Gate Charge (Qg) (Max) @ Vgs 68nC @ 4.5V
Rise Time 32ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 36A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 300A
Avalanche Energy Rating (Eas) 260 mJ
Height 506μm
Length 6.35mm
Width 5.05mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet

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