IRF6810STRPBF
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | DirectFET™ Isometric S1 |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| JESD-30 Code | R-XBCC-N3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2.1W Ta 20W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.1W |
| Case Connection | DRAIN |
| Turn On Delay Time | 8.2 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 5.2m Ω @ 16A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1038pF @ 13V |
| Current - Continuous Drain (Id) @ 25°C | 16A Ta 50A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| Rise Time | 22ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±16V |
| Fall Time (Typ) | 4.8 ns |
| Turn-Off Delay Time | 11 ns |
| Continuous Drain Current (ID) | 16A |
| Gate to Source Voltage (Vgs) | 16V |
| Drain Current-Max (Abs) (ID) | 50A |
| Drain-source On Resistance-Max | 0.0052Ohm |
| Drain to Source Breakdown Voltage | 25V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
