IRF6893MTRPBF
| Parameters | |
|---|---|
| Vgs(th) (Max) @ Id | 2.1V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3480pF @ 13V |
| Current - Continuous Drain (Id) @ 25°C | 29A Ta 168A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 38nC @ 4.5V |
| Rise Time | 83ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±16V |
| Fall Time (Typ) | 33 ns |
| Turn-Off Delay Time | 19 ns |
| Continuous Drain Current (ID) | 29A |
| Gate to Source Voltage (Vgs) | 16V |
| Drain to Source Breakdown Voltage | 25V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | DirectFET™ Isometric MX |
| Number of Pins | 7 |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| Series | HEXFET® |
| Part Status | Last Time Buy |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Configuration | Single |
| Power Dissipation-Max | 2.1W Ta 69W Tc |
| Power Dissipation | 2.1W |
| Turn On Delay Time | 18 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 1.6m Ω @ 29A, 10V |
See Relate Datesheet
