Parameters | |
---|---|
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Number of Pins | 8 |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2004 |
Series | FETKY™ |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Resistance | 105MOhm |
Subcategory | Other Transistors |
Voltage - Rated DC | -55V |
Technology | MOSFET (Metal Oxide) |
Current Rating | -3.4A |
Number of Elements | 1 |
Configuration | Single |
Power Dissipation-Max | 2W Ta |
Power Dissipation | 2W |
Turn On Delay Time | 14 ns |
FET Type | P-Channel |
Rds On (Max) @ Id, Vgs | 105m Ω @ 3.4A, 10V |
Vgs(th) (Max) @ Id | 1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 690pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 3.4A Ta |
Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
Rise Time | 10ns |
Drain to Source Voltage (Vdss) | 55V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 22 ns |
Turn-Off Delay Time | 43 ns |
Continuous Drain Current (ID) | -3.4A |
Threshold Voltage | -1V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | -55V |
Dual Supply Voltage | -55V |
FET Feature | Schottky Diode (Isolated) |
Nominal Vgs | -1 V |
Height | 1.4986mm |
Length | 4.9784mm |
Width | 3.9878mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |