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IRF740SPBF

MOSFET N-CH 400V 10A D2PAK


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-IRF740SPBF
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 373
  • Description: MOSFET N-CH 400V 10A D2PAK (Kg)

Details

Tags

Parameters
Element Configuration Single
Power Dissipation 125W
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 550mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Rise Time 27ns
Drain to Source Voltage (Vdss) 400V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 24 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 10A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 400V
Input Capacitance 1.4nF
Drain to Source Resistance 550mOhm
Rds On Max 550 mΩ
Height 4.83mm
Length 10.67mm
Width 9.65mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK
Weight 1.437803g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 550mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 400V
Technology MOSFET (Metal Oxide)
Current Rating 10A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.1W Ta 125W Tc
See Relate Datesheet

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