IRF7452PBF
| Parameters | |
|---|---|
| Rds On (Max) @ Id, Vgs | 60m Ω @ 2.7A, 10V |
| Vgs(th) (Max) @ Id | 5.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 930pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
| Rise Time | 11ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 13 ns |
| Turn-Off Delay Time | 16 ns |
| Continuous Drain Current (ID) | 4.5A |
| Threshold Voltage | 5.5V |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 100V |
| Pulsed Drain Current-Max (IDM) | 36A |
| Dual Supply Voltage | 100V |
| Avalanche Energy Rating (Eas) | 200 mJ |
| Recovery Time | 120 ns |
| Nominal Vgs | 5.5 V |
| Height | 1.4986mm |
| Length | 4.9784mm |
| Width | 3.9878mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2001 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 60mOhm |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 100V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 4.5A |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.5W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Turn On Delay Time | 9.5 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
See Relate Datesheet
