Parameters | |
---|---|
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PDSO-G8 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 2.5W Ta |
Operating Mode | ENHANCEMENT MODE |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 8m Ω @ 14A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 3150pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 14A Ta |
Gate Charge (Qg) (Max) @ Vgs | 51nC @ 4.5V |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 2.7V 10V |
Vgs (Max) | ±12V |
JEDEC-95 Code | MS-012AA |
Drain Current-Max (Abs) (ID) | 14A |
Drain-source On Resistance-Max | 0.008Ohm |
Pulsed Drain Current-Max (IDM) | 110A |
DS Breakdown Voltage-Min | 30V |
Avalanche Energy Rating (Eas) | 320 mJ |
RoHS Status | ROHS3 Compliant |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Surface Mount | YES |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2004 |
Series | HEXFET® |
Part Status | Discontinued |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |