Parameters | |
---|---|
Number of Terminations | 8 |
ECCN Code | EAR99 |
Resistance | 15.5MOhm |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | AVALANCHE RATED |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 40V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Current Rating | 9.4A |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 2.5W Ta |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.5W |
Turn On Delay Time | 7.6 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 15.5m Ω @ 9.4A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 2460pF @ 20V |
Current - Continuous Drain (Id) @ 25°C | 9.4A Ta |
Gate Charge (Qg) (Max) @ Vgs | 34nC @ 4.5V |
Rise Time | 2.3ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±12V |
Fall Time (Typ) | 3.8 ns |
Turn-Off Delay Time | 20 ns |
Continuous Drain Current (ID) | 9.4A |
Threshold Voltage | 2V |
Gate to Source Voltage (Vgs) | 12V |
Drain to Source Breakdown Voltage | 40V |
Pulsed Drain Current-Max (IDM) | 75A |
Height | 1.4986mm |
Length | 4.9784mm |
Width | 3.9878mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2004 |
Series | HEXFET® |
JESD-609 Code | e3 |
Part Status | Discontinued |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |