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IRF7473TRPBF

MOSFET N-CH 100V 6.9A 8-SOIC


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRF7473TRPBF
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 504
  • Description: MOSFET N-CH 100V 6.9A 8-SOIC (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature ULTRA LOW RESISTANCE
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 6.9A
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Row Spacing 6.3 mm
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 24 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 26m Ω @ 4.1A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3180pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6.9A Ta
Gate Charge (Qg) (Max) @ Vgs 61nC @ 10V
Rise Time 20ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 29 ns
Continuous Drain Current (ID) 6.9A
Threshold Voltage 5.5V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.026Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 55A
Dual Supply Voltage 100V
Nominal Vgs 5.5 V
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
See Relate Datesheet

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