IRF7509TRPBF
| Parameters | |
|---|---|
| FET Feature | Logic Level Gate |
| Nominal Vgs | 1 V |
| Height | 1.11mm |
| Length | 3.048mm |
| Width | 3.048mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1998 |
| Series | HEXFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| Resistance | 200mOhm |
| Additional Feature | ULTRA LOW RESISTANCE |
| Max Power Dissipation | 1.25W |
| Terminal Form | GULL WING |
| Current Rating | 2.7A |
| Base Part Number | IRF7509PBF |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.25W |
| FET Type | N and P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 110m Ω @ 1.7A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 210pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 2.7A 2A |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Rise Time | 12ns |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Fall Time (Typ) | 9.3 ns |
| Turn-Off Delay Time | 19 ns |
| Continuous Drain Current (ID) | 2.7A |
| Threshold Voltage | 1V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Junction Temperature (Tj) | 150°C |
See Relate Datesheet
