Parameters | |
---|---|
Package / Case | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2001 |
Series | HEXFET® |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 2 (1 Year) |
Number of Terminations | 8 |
Additional Feature | HIGH RELIABILITY |
Voltage - Rated DC | 20V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Current Rating | 6.5A |
Number of Elements | 1 |
Power Dissipation-Max | 1.8W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.8W |
Turn On Delay Time | 8.5 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 30m Ω @ 6.5A, 4.5V |
Vgs(th) (Max) @ Id | 1.2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1310pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 6.5A Ta |
Gate Charge (Qg) (Max) @ Vgs | 22nC @ 5V |
Rise Time | 11ns |
Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
Vgs (Max) | ±12V |
Fall Time (Typ) | 16 ns |
Turn-Off Delay Time | 36 ns |
Continuous Drain Current (ID) | 6.5A |
Threshold Voltage | 1.2V |
Gate to Source Voltage (Vgs) | 12V |
Drain-source On Resistance-Max | 0.03Ohm |
Drain to Source Breakdown Voltage | 20V |
Pulsed Drain Current-Max (IDM) | 50A |
Height | 860μm |
Length | 3mm |
Width | 3mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Contains Lead |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |