IRF7726TRPBF
| Parameters | |
|---|---|
| Continuous Drain Current (ID) | -7A |
| Threshold Voltage | -2.5V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 7A |
| Drain to Source Breakdown Voltage | -30V |
| Nominal Vgs | -2.5 V |
| Height | 910μm |
| Length | 3.048mm |
| Width | 3.048mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead, Lead Free |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2000 |
| Series | HEXFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 26mOhm |
| Additional Feature | ULTRA LOW RESISTANCE |
| Voltage - Rated DC | -30V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | -7A |
| Number of Elements | 1 |
| Power Dissipation-Max | 1.79W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.79W |
| Turn On Delay Time | 15 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 26m Ω @ 7A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2204pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 7A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 69nC @ 10V |
| Rise Time | 25ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 107 ns |
| Turn-Off Delay Time | 227 ns |
See Relate Datesheet
