banner_page

IRF7749L1TRPBF

IRF7749L1TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRF7749L1TRPBF
  • Package: DirectFET™ Isometric L8
  • Datasheet: PDF
  • Stock: 619
  • Description: IRF7749L1TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric L8
Number of Pins 15
Supplier Device Package DIRECTFET L8
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.3W Ta 125W Tc
Power Dissipation 3.3W
Turn On Delay Time 17 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.5mOhm @ 120A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 12320pF @ 25V
Current - Continuous Drain (Id) @ 25°C 33A Ta 200A Tc
Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V
Rise Time 43ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 39 ns
Turn-Off Delay Time 78 ns
Continuous Drain Current (ID) 200A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Input Capacitance 12.32nF
Drain to Source Resistance 1.1mOhm
Rds On Max 1.5 mΩ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good