Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | DirectFET™ Isometric L8 |
Number of Pins | 15 |
Supplier Device Package | DIRECTFET L8 |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2013 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Max Operating Temperature | 175°C |
Min Operating Temperature | -55°C |
Technology | MOSFET (Metal Oxide) |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 3.3W Ta 125W Tc |
Power Dissipation | 3.3W |
Turn On Delay Time | 17 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 1.5mOhm @ 120A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 12320pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 33A Ta 200A Tc |
Gate Charge (Qg) (Max) @ Vgs | 300nC @ 10V |
Rise Time | 43ns |
Drain to Source Voltage (Vdss) | 60V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 39 ns |
Turn-Off Delay Time | 78 ns |
Continuous Drain Current (ID) | 200A |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 60V |
Input Capacitance | 12.32nF |
Drain to Source Resistance | 1.1mOhm |
Rds On Max | 1.5 mΩ |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |