Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | DirectFET™ Isometric L8 |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Manufacturer Package Identifier | IRF7749L2TRPBF |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2009 |
Series | HEXFET® |
JESD-609 Code | e1 |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 9 |
ECCN Code | EAR99 |
Terminal Finish | TIN SILVER COPPER |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | BOTTOM |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
JESD-30 Code | R-XBCC-N9 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Channels | 1 |
Power Dissipation-Max | 3.3W Ta 125W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 3.8W |
Case Connection | DRAIN |
Turn On Delay Time | 29 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 1.5m Ω @ 120A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 12320pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 33A Ta 375A Tc |
Gate Charge (Qg) (Max) @ Vgs | 300nC @ 10V |
Rise Time | 43ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 39 ns |
Turn-Off Delay Time | 72 ns |
Continuous Drain Current (ID) | 33A |
Threshold Voltage | 4V |
Gate to Source Voltage (Vgs) | 60V |
Drain Current-Max (Abs) (ID) | 375A |
Drain to Source Breakdown Voltage | 60V |
Avalanche Energy Rating (Eas) | 260 mJ |
Max Junction Temperature (Tj) | 175°C |
Nominal Vgs | 2.9 V |
Height | 740μm |
Length | 9.144mm |
Width | 7.112mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |