IRF7807APBF
| Parameters | |
|---|---|
| Resistance | 25MOhm |
| Voltage - Rated DC | 30V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 6.6A |
| Number of Elements | 1 |
| Row Spacing | 6.3 mm |
| Power Dissipation-Max | 2.5W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Turn On Delay Time | 12 ns |
| Mount | Surface Mount |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 25m Ω @ 7A, 4.5V |
| Mounting Type | Surface Mount |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Current - Continuous Drain (Id) @ 25°C | 8.3A Ta |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 5V |
| Rise Time | 17ns |
| Number of Pins | 8 |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V |
| Vgs (Max) | ±12V |
| Transistor Element Material | SILICON |
| Fall Time (Typ) | 6 ns |
| Operating Temperature | -55°C~150°C TJ |
| Turn-Off Delay Time | 25 ns |
| Continuous Drain Current (ID) | 8.3A |
| Threshold Voltage | 1V |
| Packaging | Tube |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 66A |
| Published | 2004 |
| Dual Supply Voltage | 30V |
| Nominal Vgs | 1 V |
| Height | 1.4986mm |
| Length | 4.9784mm |
| Width | 3.9878mm |
| Series | HEXFET® |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Contains Lead, Lead Free |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
See Relate Datesheet
