IRF7854TRPBF
| Parameters | |
|---|---|
| Rds On (Max) @ Id, Vgs | 13.4m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id | 4.9V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1620pF @ 25V |
| Factory Lead Time | 1 Week |
| Current - Continuous Drain (Id) @ 25°C | 10A Ta |
| Mount | Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
| Mounting Type | Surface Mount |
| Rise Time | 8.5ns |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Vgs (Max) | ±20V |
| Operating Temperature | -55°C~150°C TJ |
| Fall Time (Typ) | 8.6 ns |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| Turn-Off Delay Time | 15 ns |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Continuous Drain Current (ID) | 10A |
| Part Status | Active |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 80V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Pulsed Drain Current-Max (IDM) | 79A |
| Height | 1.4986mm |
| Number of Terminations | 8 |
| Length | 4.9784mm |
| ECCN Code | EAR99 |
| Width | 3.9878mm |
| Radiation Hardening | No |
| Terminal Finish | MATTE TIN |
| RoHS Status | ROHS3 Compliant |
| Subcategory | FET General Purpose Power |
| Lead Free | Lead Free |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2.5W Ta |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Turn On Delay Time | 9.4 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
See Relate Datesheet
