IRF9310PBF
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2010 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 4.6MOhm |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| JESD-30 Code | R-PDSO-G3 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 2.5W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Case Connection | DRAIN |
| Turn On Delay Time | 25 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 4.6m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 5250pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 20A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 165nC @ 10V |
| Rise Time | 47ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 70 ns |
| Turn-Off Delay Time | 65 ns |
| Continuous Drain Current (ID) | -20A |
| Threshold Voltage | -1.8V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -30V |
| Avalanche Energy Rating (Eas) | 630 mJ |
| Recovery Time | 107 ns |
| Max Junction Temperature (Tj) | 150°C |
| Nominal Vgs | -1.8 V |
| Height | 1.75mm |
| Length | 4.9784mm |
| Width | 3.9878mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
