IRF9317PBF
| Parameters | |
|---|---|
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 120 ns |
| Turn-Off Delay Time | 160 ns |
| Continuous Drain Current (ID) | -16A |
| Threshold Voltage | -1.8V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.0066Ohm |
| Drain to Source Breakdown Voltage | -30V |
| Avalanche Energy Rating (Eas) | 330 mJ |
| Recovery Time | 50 ns |
| Nominal Vgs | -1.8 V |
| Height | 1.5mm |
| Length | 5mm |
| Width | 4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2010 |
| Series | HEXFET® |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.5W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Turn On Delay Time | 19 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 6.6m Ω @ 16A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2820pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 16A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 92nC @ 10V |
| Rise Time | 64ns |
See Relate Datesheet
