Parameters | |
---|---|
Pulsed Drain Current-Max (IDM) | 96A |
Recovery Time | 76 ns |
Nominal Vgs | -1.8 V |
Height | 1.4986mm |
Length | 4.9784mm |
Width | 3.9878mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2004 |
Series | HEXFET® |
Part Status | Discontinued |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Number of Elements | 1 |
Power Dissipation-Max | 2.5W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.5W |
Turn On Delay Time | 19 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 11.9m Ω @ 12A, 10V |
Vgs(th) (Max) @ Id | 2.4V @ 25μA |
Input Capacitance (Ciss) (Max) @ Vds | 1680pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 12A Tc |
Gate Charge (Qg) (Max) @ Vgs | 52nC @ 10V |
Rise Time | 57ns |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 66 ns |
Turn-Off Delay Time | 80 ns |
Continuous Drain Current (ID) | -12A |
Threshold Voltage | -1.8V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | -30V |