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IRF9335TRPBF

MOSFET P-CH 30V 5.4A 8-SOIC


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRF9335TRPBF
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 264
  • Description: MOSFET P-CH 30V 5.4A 8-SOIC (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 59MOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 9.7 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 59m Ω @ 5.4A, 10V
Vgs(th) (Max) @ Id 2.4V @ 10μA
Input Capacitance (Ciss) (Max) @ Vds 386pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.4A Ta
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Rise Time 19ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) -5.4A
Threshold Voltage -1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
Pulsed Drain Current-Max (IDM) 43A
Nominal Vgs -1.8 V
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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