Parameters | |
---|---|
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Power Dissipation-Max | 3.8W Ta 48W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 3.8W |
Case Connection | DRAIN |
Turn On Delay Time | 14 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 480m Ω @ 4A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 6.8A Tc |
Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
Rise Time | 47ns |
Drain to Source Voltage (Vdss) | 100V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 31 ns |
Turn-Off Delay Time | 28 ns |
Continuous Drain Current (ID) | -6.8A |
Threshold Voltage | -4V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | -100V |
Pulsed Drain Current-Max (IDM) | 27A |
Recovery Time | 150 ns |
Nominal Vgs | -4 V |
Height | 4.826mm |
Length | 10.668mm |
Width | 9.65mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 1998 |
Series | HEXFET® |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Resistance | 480mOhm |