Parameters | |
---|---|
Surface Mount | NO |
Transistor Element Material | SILICON |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | TIN LEAD |
Terminal Position | SINGLE |
Terminal Form | THROUGH-HOLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PSFM-T3 |
Qualification Status | COMMERCIAL |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
Transistor Application | SWITCHING |
Polarity/Channel Type | P-CHANNEL |
JEDEC-95 Code | TO-220AB |
Drain Current-Max (Abs) (ID) | 12A |
Drain-source On Resistance-Max | 0.3Ohm |
Pulsed Drain Current-Max (IDM) | 48A |
DS Breakdown Voltage-Min | 80V |
Avalanche Energy Rating (Eas) | 500 mJ |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
RoHS Status | Non-RoHS Compliant |