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IRF9640PBF

MOSFET P-CH 200V 11A TO-220AB


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-IRF9640PBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 602
  • Description: MOSFET P-CH 200V 11A TO-220AB (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 500mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC -200V
Technology MOSFET (Metal Oxide)
Current Rating -11A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 125W Tc
Element Configuration Single
Power Dissipation 125W
Turn On Delay Time 14 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 500mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Rise Time 43ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 38 ns
Turn-Off Delay Time 39 ns
Continuous Drain Current (ID) -11A
Threshold Voltage -4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -200V
Input Capacitance 1.2nF
Recovery Time 300 ns
Max Junction Temperature (Tj) 150°C
Drain to Source Resistance 500mOhm
Rds On Max 500 mΩ
Nominal Vgs -4 V
Height 19.89mm
Length 10.41mm
Width 4.7mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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