Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Supplier Device Package | TO-220AB |
Weight | 6.000006g |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2014 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Resistance | 500mOhm |
Max Operating Temperature | 150°C |
Min Operating Temperature | -55°C |
Voltage - Rated DC | -200V |
Technology | MOSFET (Metal Oxide) |
Current Rating | -11A |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 125W Tc |
Element Configuration | Single |
Power Dissipation | 125W |
Turn On Delay Time | 14 ns |
FET Type | P-Channel |
Rds On (Max) @ Id, Vgs | 500mOhm @ 6.6A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 11A Tc |
Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V |
Rise Time | 43ns |
Drain to Source Voltage (Vdss) | 200V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 38 ns |
Turn-Off Delay Time | 39 ns |
Continuous Drain Current (ID) | -11A |
Threshold Voltage | -4V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | -200V |
Input Capacitance | 1.2nF |
Recovery Time | 300 ns |
Max Junction Temperature (Tj) | 150°C |
Drain to Source Resistance | 500mOhm |
Rds On Max | 500 mΩ |
Nominal Vgs | -4 V |
Height | 19.89mm |
Length | 10.41mm |
Width | 4.7mm |
Radiation Hardening | No |
REACH SVHC | Unknown |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |