banner_page

IRF9Z14SPBF

MOSFET P-CH 60V 6.7A D2PAK


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-IRF9Z14SPBF
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 832
  • Description: MOSFET P-CH 60V 6.7A D2PAK (Kg)

Details

Tags

Parameters
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V
Dual Supply Voltage 60V
Input Capacitance 270pF
Drain to Source Resistance 500mOhm
Rds On Max 500 mΩ
Nominal Vgs -4 V
Height 4.83mm
Length 10.67mm
Width 9.65mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Surface Mount, Through Hole
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK
Weight 1.437803g
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 500mOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC -60V
Technology MOSFET (Metal Oxide)
Current Rating -6.7A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.7W Ta 43W Tc
Element Configuration Single
Power Dissipation 3.7W
Turn On Delay Time 11 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 500mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 270pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6.7A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time 63ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 31 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) -6.7A
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good