IRF9Z24NSPBF
| Parameters | |
|---|---|
| Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 12A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 19nC @ 10V |
| Rise Time | 55ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 37 ns |
| Turn-Off Delay Time | 23 ns |
| Continuous Drain Current (ID) | -12A |
| Threshold Voltage | -4V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -55V |
| Pulsed Drain Current-Max (IDM) | 48A |
| Dual Supply Voltage | 55V |
| Avalanche Energy Rating (Eas) | 96 mJ |
| Nominal Vgs | -4 V |
| Height | 4.83mm |
| Length | 10.67mm |
| Width | 10.54mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2005 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 3.8W Ta 45W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 45W |
| Case Connection | DRAIN |
| Turn On Delay Time | 13 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 175m Ω @ 7.2A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
See Relate Datesheet
