IRFB23N20DPBF
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2000 |
| Series | HEXFET® |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | Through Hole |
| ECCN Code | EAR99 |
| Resistance | 100MOhm |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 200V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 24A |
| Number of Elements | 1 |
| Power Dissipation-Max | 3.8W Ta 170W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 170W |
| Case Connection | DRAIN |
| Turn On Delay Time | 14 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 100m Ω @ 14A, 10V |
| Vgs(th) (Max) @ Id | 5.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1960pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 24A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 86nC @ 10V |
| Rise Time | 32ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 16 ns |
| Turn-Off Delay Time | 26 ns |
| Continuous Drain Current (ID) | 24A |
| Threshold Voltage | 5.5V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 200V |
| Pulsed Drain Current-Max (IDM) | 96A |
| Dual Supply Voltage | 200V |
| Avalanche Energy Rating (Eas) | 250 mJ |
| Nominal Vgs | 5.5 V |
| Height | 4.69mm |
| Length | 10.54mm |
| Width | 4.699mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead, Lead Free |
See Relate Datesheet
