Parameters | |
---|---|
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2006 |
Series | HEXFET® |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Termination | Through Hole |
ECCN Code | EAR99 |
Resistance | 4.1MOhm |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 75V |
Technology | MOSFET (Metal Oxide) |
Current Rating | 170A |
Number of Elements | 1 |
Power Dissipation-Max | 300W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 300mW |
Case Connection | DRAIN |
Turn On Delay Time | 20 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 4.1m Ω @ 75A, 10V |
Vgs(th) (Max) @ Id | 4V @ 150μA |
Input Capacitance (Ciss) (Max) @ Vds | 6920pF @ 50V |
Current - Continuous Drain (Id) @ 25°C | 120A Tc |
Gate Charge (Qg) (Max) @ Vgs | 170nC @ 10V |
Rise Time | 68ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Turn-Off Delay Time | 55 ns |
Continuous Drain Current (ID) | 170A |
Threshold Voltage | 4V |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 75V |
Pulsed Drain Current-Max (IDM) | 670A |
Dual Supply Voltage | 75V |
Recovery Time | 54 ns |
Nominal Vgs | 4 V |
Height | 9.017mm |
Length | 10.66mm |
Width | 4.82mm |