Parameters | |
---|---|
Nominal Vgs | 5 V |
Height | 9.02mm |
Length | 10.6426mm |
Width | 4.82mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2005 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Termination | Through Hole |
ECCN Code | EAR99 |
Resistance | 72.5mOhm |
Additional Feature | HIGH RELIABILITY |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 100V |
Technology | MOSFET (Metal Oxide) |
Current Rating | 18A |
Number of Elements | 1 |
Power Dissipation-Max | 60W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 60W |
Turn On Delay Time | 7.7 ns |
FET Type | N-Channel |
Transistor Application | AMPLIFIER |
Rds On (Max) @ Id, Vgs | 72.5m Ω @ 13A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 50V |
Current - Continuous Drain (Id) @ 25°C | 18A Tc |
Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
Rise Time | 28ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 3.9 ns |
Turn-Off Delay Time | 14 ns |
Continuous Drain Current (ID) | 18A |
Threshold Voltage | 5V |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 100V |
Pulsed Drain Current-Max (IDM) | 57A |
Dual Supply Voltage | 100V |
Avalanche Energy Rating (Eas) | 25 mJ |
Recovery Time | 62 ns |