Parameters | |
---|---|
Dual Supply Voltage | 200V |
Recovery Time | 150 ns |
Max Junction Temperature (Tj) | 175°C |
Nominal Vgs | 5 V |
Height | 19.8mm |
Length | 10.6426mm |
Width | 4.82mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~175°C TJ |
Packaging | Tube |
Published | 2004 |
Series | HEXFET® |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Termination | Through Hole |
ECCN Code | EAR99 |
Resistance | 24MOhm |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 330W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 330W |
Case Connection | DRAIN |
Turn On Delay Time | 33 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 24m Ω @ 46A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 4600pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 65A Tc |
Gate Charge (Qg) (Max) @ Vgs | 98nC @ 10V |
Rise Time | 20ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 31 ns |
Turn-Off Delay Time | 21 ns |
Continuous Drain Current (ID) | 65A |
Threshold Voltage | 5V |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 30V |
Drain to Source Breakdown Voltage | 200V |
Pulsed Drain Current-Max (IDM) | 260A |