IRFB4233PBF
| Parameters | |
|---|---|
| Power Dissipation | 370W |
| Turn On Delay Time | 31 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 37mOhm @ 28A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 5510pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 56A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 170nC @ 10V |
| Drain to Source Voltage (Vdss) | 230V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Turn-Off Delay Time | 51 ns |
| Continuous Drain Current (ID) | 56A |
| Threshold Voltage | 5V |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 230V |
| Dual Supply Voltage | 276V |
| Input Capacitance | 5.51nF |
| Drain to Source Resistance | 37mOhm |
| Rds On Max | 37 mΩ |
| Nominal Vgs | 5 V |
| Height | 16.51mm |
| Length | 10.6426mm |
| Width | 4.82mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Supplier Device Package | TO-220AB |
| Operating Temperature | -40°C~175°C TJ |
| Packaging | Tube |
| Published | 2007 |
| Series | HEXFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Termination | Through Hole |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Power Dissipation-Max | 370W Tc |
| Element Configuration | Single |
See Relate Datesheet
