Parameters | |
---|---|
Drain Current-Max (Abs) (ID) | 75A |
Drain to Source Breakdown Voltage | 100V |
Pulsed Drain Current-Max (IDM) | 550A |
Dual Supply Voltage | 100V |
Avalanche Energy Rating (Eas) | 980 mJ |
Recovery Time | 68 ns |
Nominal Vgs | 4 V |
Height | 9.02mm |
Factory Lead Time | 1 Week |
Length | 10.6426mm |
Contact Plating | Tin |
Width | 4.82mm |
Mount | Through Hole |
Mounting Type | Through Hole |
Radiation Hardening | No |
Package / Case | TO-220-3 |
REACH SVHC | No SVHC |
Number of Pins | 3 |
Transistor Element Material | SILICON |
RoHS Status | ROHS3 Compliant |
Operating Temperature | -55°C~175°C TJ |
Lead Free | Lead Free |
Packaging | Tube |
Published | 2004 |
Series | HEXFET® |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Termination | Through Hole |
ECCN Code | EAR99 |
Resistance | 7MOhm |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 100V |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | 250 |
Current Rating | 140A |
Time@Peak Reflow Temperature-Max (s) | 30 |
Number of Elements | 1 |
Power Dissipation-Max | 300W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 300W |
Case Connection | DRAIN |
Turn On Delay Time | 26 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 7m Ω @ 75A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 7670pF @ 50V |
Current - Continuous Drain (Id) @ 25°C | 130A Tc |
Gate Charge (Qg) (Max) @ Vgs | 250nC @ 10V |
Rise Time | 110ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 78 ns |
Turn-Off Delay Time | 68 ns |
Continuous Drain Current (ID) | 130A |
Threshold Voltage | 4V |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 20V |