Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2006 |
Series | HEXFET® |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 14mOhm |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 100V |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Current Rating | 73A |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Qualification Status | Not Qualified |
Lead Pitch | 2.54mm |
Number of Elements | 1 |
Power Dissipation-Max | 190W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 190W |
Case Connection | DRAIN |
Turn On Delay Time | 18 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 14m Ω @ 44A, 10V |
Vgs(th) (Max) @ Id | 4V @ 100μA |
Input Capacitance (Ciss) (Max) @ Vds | 3550pF @ 50V |
Current - Continuous Drain (Id) @ 25°C | 73A Tc |
Gate Charge (Qg) (Max) @ Vgs | 140nC @ 10V |
Rise Time | 87ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 70 ns |
Turn-Off Delay Time | 3 ns |
Reverse Recovery Time | 35 ns |
Continuous Drain Current (ID) | 73A |
Threshold Voltage | 4V |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 100V |
Pulsed Drain Current-Max (IDM) | 290A |
Dual Supply Voltage | 100V |
Recovery Time | 53 ns |
Nominal Vgs | 4 V |
Height | 8.77mm |
Length | 10.54mm |
Width | 4.69mm |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |