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IRFB7437PBF

MOSFET N CH 40V 195A TO220


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRFB7437PBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 476
  • Description: MOSFET N CH 40V 195A TO220 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2012
Series HEXFET®, StrongIRFET™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 2MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 230W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 230W
Case Connection DRAIN
Turn On Delay Time 19 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 3.9V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 7330pF @ 25V
Current - Continuous Drain (Id) @ 25°C 195A Tc
Gate Charge (Qg) (Max) @ Vgs 225nC @ 10V
Rise Time 70ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 53 ns
Turn-Off Delay Time 78 ns
Continuous Drain Current (ID) 195A
Threshold Voltage 3V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Recovery Time 30 ns
Nominal Vgs 3 V
Height 16.51mm
Length 10.67mm
Width 4.83mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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