Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Weight | 6.000006g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2013 |
Series | HEXFET®, StrongIRFET™ |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 294W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 294W |
Case Connection | ISOLATED |
Turn On Delay Time | 20 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 2.4m Ω @ 100A, 10V |
Vgs(th) (Max) @ Id | 3.7V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 10034pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 195A Tc |
Gate Charge (Qg) (Max) @ Vgs | 279nC @ 10V |
Rise Time | 134ns |
Drain to Source Voltage (Vdss) | 60V |
Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 93 ns |
Turn-Off Delay Time | 118 ns |
Continuous Drain Current (ID) | 195A |
Threshold Voltage | 3.7V |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.0024Ohm |
Pulsed Drain Current-Max (IDM) | 944A |
DS Breakdown Voltage-Min | 60V |
Avalanche Energy Rating (Eas) | 775 mJ |
Height | 16.51mm |
Length | 10.67mm |
Width | 4.83mm |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |