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IRFBG20PBF

MOSFET N-CH 1000V 1.4A TO-220AB


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-IRFBG20PBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 884
  • Description: MOSFET N-CH 1000V 1.4A TO-220AB (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 11Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 1kV
Technology MOSFET (Metal Oxide)
Current Rating 1.4A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 54W Tc
Element Configuration Single
Power Dissipation 54W
Turn On Delay Time 9.4 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 11Ohm @ 840mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.4A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time 17ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 31 ns
Turn-Off Delay Time 58 ns
Continuous Drain Current (ID) 1.4A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 1kV
Input Capacitance 500pF
Max Junction Temperature (Tj) 150°C
Drain to Source Resistance 11Ohm
Rds On Max 11 Ω
Nominal Vgs 4 V
Height 19.89mm
Length 10.41mm
Width 4.7mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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