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IRFBG30PBF

In a Tube of 50, IRFBG30PBF N-Channel MOSFET, 3.1 A, 1000 V, 3-Pin TO-220AB Vishay


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-IRFBG30PBF
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 962
  • Description: In a Tube of 50, IRFBG30PBF N-Channel MOSFET, 3.1 A, 1000 V, 3-Pin TO-220AB Vishay (Kg)

Details

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Parameters
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 5Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 1kV
Technology MOSFET (Metal Oxide)
Current Rating 3.1A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 125W Tc
Element Configuration Single
Power Dissipation 125W
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 980pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.1A Tc
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Rise Time 25ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 89 ns
Continuous Drain Current (ID) 3.1A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 1kV
Input Capacitance 980pF
Recovery Time 620 ns
Max Junction Temperature (Tj) 150°C
Drain to Source Resistance 5Ohm
Rds On Max 5 Ω
Nominal Vgs 4 V
Height 19.89mm
Length 10.41mm
Width 4.7mm
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
Part Status Active
See Relate Datesheet

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